Preparation And Properties Of CuO Nanoplate Devices

Nanoscale semiconductor metal oxide materials provide sufficient prerequisites for the development of new functional materials due to their good electrical properties,stable chemical properties and high cost performance.In most metal oxide semiconductors,copper oxide(CuO)has important industrial application value in the fields of catalysis,batteries,solar energy conversion,gas sensing,and field emission.In this thesis,two kinds of devices based on CuO nanomaterials-memristive device and surface enhanced Raman scattering(SERS)substrate were prepared due to the electrical resistance conversion characteristics and the biological sensing characteristics of nano CuO.The memory resistance characteristics and the multi-level resistance effect of the memristive device were analyzed.The sensitivity and detection limit of the CuO-Ag composite SERS substrate for the detection of different traces of the molecules were tested.Then,the active layer of the device is optimized by laser irradiation,and finally the mechanism of the device and the method of laser modification were analyzed.The inkjet printing was used to prepare the memristive device,which solved the problems of high temperature,high vacuum and long deposition time required by the traditional molding process.The prepared CuO memristive device has typical memory characteristics,with obvious high and low resistance states,and the resistance of different resistance states can be controlled in multiple levels.At the same time,the spin coating process was used to achieve the preparation of SERS substrates with high sensitivity and good reproducibility.The low concentration trace detection of the R6G and BPA was achieved,and the detection limits were 10~-1212 mol/L and 10~-99 mol/L respectively.Laser irradiation was used to optimize the performance of CuO nanosheet memristive device and CuO-Ag SERS substrate.By laser irradiation,the resistance conversion window of the CuO memristor device was effectively increased,and internal resistance of the device was reduced.Most importantly,the ratio of high to low resistance of the memristive device is increased by 10-100 times after laser irradiation.On the other hand,laser irradiation makes strong connections between the composite structures of the SERS substrate,increases the peak intensity of the Raman detection of R6G by 7 times,and increases the detection limit of BPA by two orders of magnitude.Finally,the mechanism of resistance conversion of CuO memristive device were analyzed by oxygen vacancy conductive filaments mechanism;and the mechanism of Raman enhancement effect of CuO-Ag SERS substrate were analyzed by CuO-Ag physical and chemical synergistic surface Raman enhancement.