Study On The Fabrication And Optoelectronic Properties Of TSC Thin Films

As a ternary layered compound with excellent properties of metals and ceramics,polycrystalline Ti₃SiC₂ material has broad application prospects.However,the current researches on Ti₃SiC₂ mainly focus on the preparation of bulk and powder materials,as well as the mechanical and tribological properties and comprehensive performance improvement.There are few reports on its optoelectric properties and its application.Therefore,using polycrystalline Ti₃SiC₂ as raw material to prepare thin film materials according to the common methods of microelectronics and optoelectronics,evaluating the microstructure,optical and electrical properties of thin film materials and seeking the application of thin film devices,have important academic and engineering significance.In this paper,the polycrystalline Ti₃SiC₂ powder was used as a target,and a titanium silicon carbon（TSC）film was prepared by DC sputtering.A titanium silicon carbon oxide（TSCO）film was prepared by reactive sputtering.The microstructure,chemical components,optoelectrical properties of TSC thin film and TSCO thin film were studied by various material characterization methods.The memristor with TSCO film as memristive dielectric material was constructed.The performance of the analog switch and the carrier transport type were analyzed.The feasibility of applying TSCO dielectric film material to the memristive switch device was explored.The main research results obtained are as follows:（1）The TSC film was successfully prepared by DC sputtering.It was found that the film exhibited an amorphous network structure.In the wavelength range of 400²000 nm,the spectral transmittance and reflectance of the TSC film increased,while the absorption rate decreased.As the film thickness becomes thicker,the spectral transmittance of the TSC film decreases,while reflectance and the absorptivity increase;the refractive index of the TSC film increases in the range of 350⁸00 nm;the conductivity of the TSC film is between the conductor and the insulator,belonging to the semiconductor materials.And the thicker the film thickness,the better the electrical conductivity.When the film thickness reaches about 400 nm,the conductivity of the TSC film is close to those of the ITO,FTO,and AZO films.（2）The TSCO film was successfully prepared by reactive sputtering.It was found that the spectral transmittance of TSCO film increased,while the reflectance decreased in the range of 400²000 nm.With the increase of oxygen content,the spectral transmittance increased;the refractive index of TSCO film does not change significantly in the range of 350⁸00 nm,and the extinction coefficient gradually decreases;the resistivity of TSCO film increases with the increase of oxygen content,the difference between“high resistance”and“low resistance”is 5 orders of magnitude,which is sufficient to meet the basic requirements of the resistance change of the TSCO film as a memristive film material.（3）The memristors of Pt/TSCO/ITO and Pt/TSCO（I）/TSCO（II）/ITO were successfully fabricated,which realized the function of analog switch and verified the nonlinear electrical properties of TSCO film.The memristive working mechanism was analyzed and found that the carrier transport type is SE,P-F and SCLC,where SE was the dominant,P-F was second,and SCLC was the weakest.