Preparation And Photoelectric Properties Of In_xAl_1-xN Thin Films Based On Quartz Substrate

In_xAl_1-xN materials are widely used in various optoelectronic devices because of their spectral range covering infrared-visible-ultraviolet spectral regions.In this paper,intrinsic and different doping types of In_xAl_1-xN films were prepared by magnetron sputtering,and their optoelectronic properties were explored and optimized.Then,the photoelectric properties of different doping types of In_xAl_1-xN films were compared for the photoelectric field.This result can also be used as a reference for the development of corresponding devices in the field of optoelectronics.In this paper,the intrinsic In_xAl_1-xN film was prepared on a quartz（SiO₂）substrate by magnetron sputtering using a metal target,a metal Al target and pure nitrogen,and the films prepared under different parameters were processed.Crystallinity analysis.The results show that the crystal of the prepared In_xAl_1-x-x N film is argon:N₂ is 20:10,the substrate temperature is 580℃,the sputtering gas pressure is 0.4 Pa,the target power is 50 W,and the aluminum target power is 250 W.The best quality.The EDS test results show that the X range of the film prepared in this paper is:0.54⁰.71,indicating that the prepared film is rich in In_xAl_1-x-x N film thickness test results,the sample thickness range is 500¹100 nm.Different preparation parameters have different effects on the growth rate of the film,among which the influence of the target power is most obvious.As the sputtering power of the target increases from 40 W to70 W,the film thickness is increased.The optical performance test from 531 nm to 1110 nm shows that the light transmittance of the film is affected by factors such as crystal quality,film thickness and density.The light transmittance of the sample in the infrared region can reach60%⁸0%.The electrical performance test results show that the surface resistance of most samples is less than 100Ω/□,and the resistivity is in the range of 10^-310^-2Ω·cm,indicating that the intrinsic In_xAl_1-xN film prepared in this paper has the good conductivity.There are fewer factors affecting the electrical properties of the film than the light transmittance of the film.The quality of the crystal has a decisive influence on the resistivity of the film,and the resistivity of the sample with good crystal quality is usually small.The preparation parameters of the intrinsic In_xAl_1-xN film with the best crystal quality,the Si₃N₄ target as the Si source,and the metal Mg target as the Mg source were used to prepare doped Si（N-type）and Mg on the quartz substrate.（P-type）In_xAl_1-xN film.The EDS test results show that the x of the Mg-doped film increases to 0.59⁰.67 compared with 0.56 of the intrinsic film,and the x of the doped Si film increases to 0.76⁰.82.The optical performance test results show that as the sputtering power of the Mg increases,the film transmittance increases gradually,and the forbidden band width decreases from the intrinsic1.81 eV to 1.45 eV.As the sputtering power of the Si increases,the transmittance decreases gradually,and the forbidden band width decreases to 1.64 eV.In terms of electrical properties,the resistivity of the doped Mg film is two magnitudes higher than that of the intrinsic film,and that of the doped Si film is significantly reduced.After the photo-response capability of the doped film and the intrinsic film was tested,it was found that the intrinsic film had a light responsivity of 30 nA/cm²,and the responsivity increased to 400 nA/cm² after the incorporation of Si impurities.The degree infused with Mg impurities is increased to 200nA/cm²,and the optical response speed of the film is also increased after the incorporation of Mg impurities.Subsequently,the field emission properties of the film were tested.The results show that the field emission current density of the intrinsic film is 152.5μA/cm² and the on-field is 7.7 V/μm when the field strength is 14 V/μm.The current density reached 184μA/cm²,and the on-state electric field was reduced to 5.8 V/μm;while the Mg impurity was reduced to 10μA/cm² and the on-state electric field was increased to 12.9 V/μm.Finally,the stress and bonding of the film were tested.The unique phonon mode and element bonding proved that the intrinsic In_xAl_1-x-x N film and the doped In_xAl_1-x-x N film were successfully prepared.