| With the rapid development of science and technology,electrostatic widespread in many industries,such as national defense,military,aerospace,petrochemical,electronic components,and so on,and it has serious harm.Antistatic material has the function of static dissipation,which can release the static electricity safely.As a new type of antistatic material,antistatic ceramics have been widely studied due to its advantages of abrasion resistance,corrosion resistance and high safety performance.However,the antistatic ceramics produced at present have many problems such as unstable anti-static performance,complex preparation process and high cost.Oxidized antistatic ceramics not only have simple preparation method and low production cost,but also have controllable range of surface resistivity from conducting electrostatic to antistatic at room temperature,which can be applied to different antistatic fields.In this paper,dry pressing molding technology and atmospheric sintering method were used to prepare three kinds of oxidized anti-static ceramics:Al2O3 doped ZnO,ZrO2 doped AZO(2 wt.%Al2O3 doped ZnO)and Nb2O5 doped ZrO2.The influences of sintering temperature,doped material content and holding time on the relative density,mechanical properties and anti-static properties of ceramics were studied.The results obtained are as follows:(1)It was obtained from characterization analysis of Al2O3 doped ZnO ceramics that the density,bending strength and hardness of ceramics increased first and maximize at 1475℃,then decreased when the sintering temperature increased.The surface resistivity of the ceramic which Al2O3 doping amount from 2 wt.%to 10 wt.%were in the range of 103Ω/□to107Ω/□which sintered from 1400℃to 1500℃,they all achieved the requirement of anti-static performance and it have controllable range of surface resistivity from conducting electrostatic to antistatic.The experiment with the 8 wt.%amount of Al2O3 doped can get the best performance when sintering at 1475℃,the shrinkage rate is 14.5%,the relative density is98.3%,the bending strength is 143.2 MPa,and the vickers hardness is 295.4 HV0.3.(2)2 wt.%Al2O3 doped ZnO ceramics with good electrical conductivity were used as the matrix material,the ZrO2 component is added to improve the mechanical properties of the materials.At the same time,the surface resistivity of the ceramics can be adjusted by controlling the doping amount of ZrO2.By analyzing the ceramic XRD phase,it was found that the tetragonal phase ZrO2 appeared when the ZrO2 doping amount was 3 wt.%,and the content of the tetragonal phase ZrO2 gradually increased with the increase of the ZrO2 doping amount.The result showed that the surface resistivity of the ceramic which ZrO2 doping amount from 1 wt.%to 15 wt.%were in the range of 105Ω/□to 108Ω/□which sintered from 1250℃to 1500℃,they all achieved the requirement of anti-static performance.The experiment with the 1 wt.%amount of ZrO2 doped can get the best performance when sintering at 1450℃,the shrinkage rate is 17.6%,the relative density is 97.6%,the bending strength is 154.5 MPa,and the vickers hardness is 357.5 HV0.3.(3)Nb2O5 doped ZrO2 antistatic ceramics were prepared by using ZrO2 as ceramic matrix material.By the analysis of XRD phase,it was found that when the doping amount of Nb2O5 was lower than 3 wt.%,the ceramic phase was single and only the tetragonal phase ZrO2 was present.When the doping amount of Nb2O5 was 4 wt.%and 5 wt.%,the tetragonal phase ZrO2 was transformed into monoclinal phase ZrO2,and the second phase Nb2Zr6O17appeared,which reduced the density and mechanical properties of ceramics.The result showed that the surface resistivity of the ceramic which Nb2O5 doping amount from 1 wt.%to5 wt.%were in the range of 105Ω/□to 1010Ω/□which sintered from 1200℃to 1350℃,they all achieved the requirement of anti-static performance.The experiment with the 1 wt.%amount of ZrO2 doped can get the best performance when sintering at 1350℃,the shrinkage rate is 21.9%,the relative density is 97.7%,the bending strength is 506.2 MPa,and the vickers hardness is 1880.0 HV0.3. |