Application Research Of GaN HEMT In Industry Inverter

Following by the development of power semiconductor,new material research and application technology on gallium nitride and silicon carbide has become more and more mature.It is faster in the recently several years especially,some of GaN substrate,MOSFET and hybrid IGBT has corresponding mature product launched in market.The characteristics of GaN includeds the wider band gap,higher breakdown electric field,high saturated electron drift velocity and so on.Compare with traditional material with Silicon substrate as the power switcher,GaN HEMT device has lower turn-on resistance and it can run in higher switching frequency.It can run on hundreds of thousand hertz or even a few mage hertz.It made the possibility on some motion control application where needs more rapid response;on the other hand the power semiconductor device require lower on cooling system due to the lower power dispassion,it make sense on reduce the material cost for the whole inverter.The main task of the research on this paper is to design one inverter with using the GaN HEMT as the power switcher,compare with traditional solution with silicon substrate IGBT on different sides: the most focus on the efficiency difference;then due to the high speed switching frequency will generate the high dv/dt,especially on the long motor cable application,this will cause the insulation problem on the rotator winding of the motor,so for high switching frequency will require an output filter,on the paper it will compare the different of the filter between traditional switching operation and high switching operation.Then it will do some investigation on the electromagnetic compatibility and the whole module cost analysis.It will verify the positive signification of using the GaN HEMT on industry inverter by the experiment and simulation.