Study On Resistive Switching Properties Of Bismuth Telluride Based Nanocomposites

With the development of semiconductor and technology,the rapid development of modern information puts forward further requirements for data storage.In the development of integrated circuits,storage technology always plays an important role,and semiconductor memory is one of the most basic components of electronic equipment.At present,the common semiconductor memory is mainly divided into volatile memory and non-volatile memory,among which volatile memory mainly includes static/dynamic random memory,non-volatile memory includes ferroelectric memory,phase change memory,magnetic memory,resistive switching memory,flash memory and so on.In today's society,the demand for memory is not only greater output,but also higher data storage density,faster access speed,lower energy consumption,lower process cost,simpler structure and higher integration density.After the traditional flash memory devices reach the physical limit,it is a hot issue in the storage field to find a new generation of semiconductor memory which can meet the above requirements.In numerous memory of candidates,the resistive switching memory has an unique advantage and received lots of attention and research,its unique kind of sandwich structure enables the resistive switching memory to use more simple process to get greater integration density,this is the reason why it may break the limitation of traditional integration of flash memory,Resistance resistive switching memory has many advantages,such as faster speed,higher to read and write data retention,more stable cycle,lower power consumption,and the compatibility of traditional craft,with the combination of flexible substrate,etc.As a result,resistive switching memory has become an excellent candidate and research hotspot in the field of memory,and the research direction mainly focuses on resistive switching materials,resistive switching structure,neural network simulation and other aspects.Bismuth telluride and its nanocomposite with other materials are studied in this paper.Bismuth telluride based memory is studied from the aspects of material preparation,material characterization,device preparation,performance characterization,performance analysis and mechanism analysis.Main content including the preparation and characterization of bismuth telluride hexagon,nanosheets,flexible resistive switching memory based on pure bismuth telluride,bismuth telluride and sodium alginate composite flexible resistive switching memory,bismuth telluride and PVPcomposite flexible resistive switching memory..Bismuth telluride nanoparticles were prepared by a simple solvent-thermal method,and the effects of different preparation factors on the morphology of bismuth telluride were analyzed.Finally,the electrical properties of the prepared devices were tested and the mechanism was analyzed.Good resistive switching properties was obtained.Finally,the series of studies in this paper are summarized and prospected.