Research On The Performance Of Electrical Devices Based On Two-Dimensional Conductive MOF

Metal-Organic Frameworks(MOFs)have gained much attention owing to their adjustable and designable structures.They have been widely applied in various fields because of their ultrahigh specific surface areas.In recent years,because of their porosity and electronic conductivity,the newly appearing conductive MOFs were applied in electrical devices including gas sensors,field effect transistors(FET),supercapacitors,lithium-sulfur batteries and so on.However,the optimization of conductive MOFs thin films with ordered nanostructures are still a great challenge.Herein,the preparation and electrical applications of high quality conductive MOF thin films with tuable thickness,compositions and nanostructures have been conducted:(1)High quality Ni3(HITP)2 thin films with controllable thicknesses were prepared by gas-solution interface method.Then,they were applied as the active layer of FET with ionic liquid as gate dielectric instead of traditional SiO2.The experimental results showed that the replacement of ionic liquid with traditional gate dielectric can efficiently reduce the operating voltage of Ni3(HITP)2-FET devices.(2)A new kind of copper-doped Ni3(HITP)2 thin film,named as CuNi-HITP,have been successfully prepared by gas-solution interface method mentioned abo've.It can be directly used as active component of chemiresistive gas sensors to detect various gases at room temperature.The incorporation of copper into Ni3(HITP)2 thin film significantly improved responses of the devices to different gases.(3)The controlled growth of Ni3(HITP)2 nanorods arrays on different substrates was realized by a facile liquid method.The nanostructured Ni3(HITP)2 supercapacitors displayed good performances.Ni3(HlTP)2 nanorods arrays grown on flexible CNTs film were assembled into flexible all-solid supercapacitors with the PVA/KC1 gel as the electrolyte.The device exhibited well rate capability and cycling stability,as well as stability under various bending states.