Study Of Ferroelectric Thin Film Capacitors With Interface-Regulated Schottky Barrier And Transient Current Characteristics

With the rapid development of artificial intelligence,Internet of things,big data and 5G communication,the market demand for non-volatile memory is increasingly strong.Under the requirements of increasingly compact size,increasingly diversified application environments,and green energy consumption,the development of a new non-volatile memory is urgent.One of the possible options for Resistive random-access memory as a next-generation non-volatile memory is a ferroelectric capacitor as a memory unit.Lead zirconate titanate?PZT?ferroelectric capacitors have the advantages of large residual polarization,fast read and write speed,and low cost.In this paper,Pb(Zr_0.53Ti_0.47)O₃ ferroelectric thin films with thicknesses of 6?m,different inducing layers and different Schottky barriers were prepared by sol-gel method.The inducing layers of PZT thin film were grown by magnetron sputtering and chemical solution deposition.The thickness,annealing time and annealing temperature were investigated for the orientation,surface texture and sheet resistance of the lanthanum nickelate film.The inducing layer was used to induce the crystal growth structure of the PZT thin film by XRD.From the hysteresis loop and the capacitor voltage curve,the remnant polarization could be 27?C/cm².Using SEM and PFM to observe the micron and nano regions,a smooth,flat and dense surface can be seen without cracks.It was observed under SEM that the PZT films with LNO bottom electrodes have a larger grain size.PFM observes that the film grown on LNO had a larger surface roughness,indicating better crystallization properties.PZT capacitors'transient current mechanism and fatigue characteristics mechanism need further study.The analysis of the hysteresis loop shows that the ferroelectricity increases firstly and then decreases with the increasing thickness.Transient currents of different structures exhibit a typical ferroelectric peak structures.With the applied electric field,the forward peak voltage gradually decreases,and the negative peak voltage gradually increases.The crystal orientation and different barrier contacts have no effect on the non-switching current of the ferroelectric thin films,and it has a great influence on the switching current.The Schottky contact interface regulates the current characteristics of capacitors.PFM studies show that the piezoelectric response of PZT films grown on LNO films is greater.