Investigation On The Transport Properties Of Black Phosphorus And CN2 In Two-Dimensional Materials

With the continuous development and progress of science and technology,various electronic devices have entered the work,study,and life of people.At the same time,our requirements for the manufacture of various electronic devices for electronic devices have become increasingly demanding.The ability to achieve lower power consumption and faster operating speeds also requires the electronic components to be more and more integrated.In response to these demands,the widely used silicon materials are beginning to be stretched.Therefore,in recent years,many scientific researchers have begun to look for new materials that can replace silicon materials in the fields of physics and chemistry.In 2004,the successful preparation of graphene was once considered to be very likely to replace the silicon material that is now widely used,and could become the material of choice for nanoelectronic device preparation in the future.However,graphene has no band gap characteristics,making it unable to produce high-performance,low-power electronic devices.As a result,people began to focus on newly discovered two-dimensional nanomaterial black phosphorus and other materials.This paper mainly studies the band structure and electron transport properties of black phosphorus and pentagonal CN2 nanoribbon.Firstly,we have studied and calculated the transport properties of monolayer phosphorene when electrostatic potential barriers are applied.According to the research results,we found that the transmission coefficient of incident electrons passing through the n-n-n junction and the n-p-n junction is a function of the incident angle,the height of the single-layer electrostatic barrier,and the incident energy carried by the incident electrons.Since there is a quasi-bound state in the middle electrostatic barrier region,the transmission coefficient function of the electron will cause oscillation behavior.The critical angle of electron transmission is also different along the transport of black phosphorus materials in different directions.When the incident angle of electrons exceeds the critical angle,the tunneling of electrons is prohibited.At the same time,the number of resonant peaks that occur during transport depends on the transport direction.Conductance in the material also shows strong anisotropy in different transport directions.The width of the gap in the conductance increases with the height of the electrostatic barrier.This property provides us with an effective way to control the transport properties of monolayer black phosphorus structures.Then,we systematically studied the electronic properties of pentagonal CN2 nanobelt.We found that the pentagonal CN2 nanoribbon are a spin-polarized semiconductor material,and the nanoribbon edge states are controlled by two CN chains at the top and bottom edges.When the adsorption of hydrogen atoms and fluorine atoms on the edges of the nanoribbon is saturated,the spin band degenerates in the band structure of the nanoribbon,the energy gap of the nanoribbon further expands,and the pentagonal CN2 nanoribbon are transformed from semiconductor materials into insulator materials.And material structure can also be more stable.Applying an external electric field and tensile strain to the nanoribbon can adjust the energy band structure of the nanoribbon and gradually reduce the energy band gap.When the applied external electric field increases to a certain degree,the nanoribbons are converted from a semiconductor material into a metal material.This feature of pentagonal CN2 nanoribbon provides us with a very effective way to control the transport of pentagonal CN2 nanoribbon.In summary,in this paper,we systematically studied the various electronic properties of black phosphorus material and pentagonal CN2 nanoribbon,providing a theoretical basis for the design of nanoelectronic devices in the future.