Preparation Of Polystyrene Nano-spheres Template By Ion Beam Etching And Si Nanowire Characteristics Was Studied

Compared with the traditional bulk silicon materials,Si nanowires,Si nano-carbons,porous silicon and other Si nano-materials with surface effect,quantum size effect,quantum tunneling and other characteristics,showing a unique optical properties,has become a field of materials science research One of the hot spots.At present,non-packed,ordered Si nanowires and Si nanocapses are prepared by template method.Commonly used templates are:alumina template(AAO),nano-ball template and photoresist template,in which nano-spheres template due to simple operation by the researchers of all ages.However,nano-sphere template is mainly obtained by reactive plasma(RIE)etching technology,and the use of ion beam etching technology to prepare nano-sphere template research rarely reported.In this paper,Ar+ion beam was used to etch the polystyrene nano-spheres with diameter below 200 nm.The effect of ion beam etching on the size and distribution of polystyrene nano-spheres was systematically studied.The nano-spheres with periodic intervals were obtained and the preparation of ordered Si nanostructures was explored based on the template.The main research contents are as follows:(1)The effect of ion beam etching time on the diameter of nano-spheres was studied.It was found that the diameter of the polystyrene nano-spheres was decreasing with the increase of the etching time,but the etching rate did not increase linearly with the increase of the etching time.The etching rate of the ion beam was slower before the etch time was 8 min,and the etching rate was accelerated after 9 min.This is related to the characteristics of ion beam etching,that is,the etching process occurs before the physical etching,at this time the etching rate showed a linear trend;with the increase of etching time,due to the accumulation of heat,the etching process by the physical etching and thermal effects Decomposition of the joint role,the etching rate will be accelerated.(2)The effect of ion beam beam on the ion beam etching nano-sphere array is explored.It is found that the larger the ion beam flow is,the smaller the diameter of nano-sphere decreases,but the larger ion beam will destroy the nano-sphere array Orderly.The change of Ar+ ion energy has little effect on the etching effect of nano-sphere in the range of the smaller beam voltage.(3)Since nano-spheres with a diameter of 100 nm are difficult to control when self-assembled monolayer films are formed,the nano-spheres with diameter of 200 nm are studied.The cavities with the same mass were obtained at different etch times.When the etching time was 24 min and 26 min,the nano-spheres with good mass were obtained.The diameter of the nano-spheres was 150 nm and 100 nm.(4)The preparation of ordered Si nanostructures was carried out by using nano-sphere template of ion beam etching.The effects of ultrasonic time,gold layer thickness and chemical etching time on the etching of Si substrate were analyzed.And the Raman,antireflection and luminescence properties of the disordered Si nanowires are briefly discussed.