| Antimony selenide?Sb2Se3?is one of the important metal selenides and has excellent characteristics such as high chemical stability,less toxicity,direct band gap?1.0-1.2 eV?and high optical absorption coefficient(>105 cm-1),which has a great application in the photoelectric field.However,the volume resistivity of antimony selenide is larger,limiting its development in the photoelectric field.One-dimensional Sb2Se3 nanomaterials and nanorod film with high specific surface area,high absorption and high axial mobility,have excellent performance in visible light,especially the red light detection.At present,the preparation of one dimensional Sb2Se3 nanomaterials and nanorods film mostly are hydrothermal,solvothermal method,and thermal evaporation process.However,these methods mentioned above are either time-consuming or vacuum process with high cost.A facile,environment-friendly,low-cost and rapid process need to be developed to synthesize uniform Sb2Se3 nanorods and nanorod film necessarily.A facile,environment-friendly,low-cost and rapid hot-injection process using triethylene glycol as solvent to synthesize uniform and size-controlled Sb2Se3 nanorods.The reaction temperature and PVP content were used to study the influence on the phase,morphology and size of Sb2Se3 nanorods,getting single-phase,size-controlled,smooth surface one-dimensional Sb2Se3 nanorods.Characterized the properties of photoelectric detector based one-dimensional Sb2Se3 nanorod film synthesized at 210°C.With obtaining photocurrent 0.84?A,dark current 12 nA,the"switch"of photodetector is 70,and response time and decay time are 64 ms and 68 ms respectively,under 658 nm light illumination?15.8 mW/cm2?at a bias of 3 V.A lower toxic mixed solvent of 1,2-ethanedithiol and 1,2-ethylenediamine had been confirmed to effectively dissolve elemental Sb,Se and S and successfully prepared Sb2(Se1-xSx)3 thin films.Solution-based deposition technology offers an alternative efficient way for low-cost,simple operation and mass production.The concentration of precursor solution was studied in the influence on the phase and morphology of Sb2Se3 nanorod film,with the better concentration is 0.4 mol/L.At the same time,explored the influence of the S element content on the phase,morphology of Sb2(Se1-xSx)3 nanorod films and photoelectric properties of the photodetector based on Sb2(Se1-xSx)3 nanorod films.With the variation of S content in Sb2(Se1-xSx)3 thin films,the band gap of the synthesized thin films can be changed from 1.18 eV to 1.32 eV.When x=0.2,the maximum photocurrent of photoelectric detector based on Sb2(Se1-xSx)3 nanorods film is 2.15?A,and the responsivity reach 3mA/W.The response time and decay time are 0.495 s and 0.329 s respectively,under xenon lamp illumination?70 mW/cm2?at a bias of 3 V. |
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