The Epitaxial Growth Of 3C-SiC Films On Si(110) Substrate By Laser CVD

Cubic Silicon carbide?3C-SiC?is wide bandgap semiconductor with many excellent characteristics such as high thermal conductivity,high breakdown field,high electron mobility,and good chemical stability and mechanical performance that make it an perspective power semiconductor materials for use in electronic devices operated at high-temperature,high-frequency,high-power and high radiation conditions.According to issues on the epi-growth of 3C-SiC thin films on Si?110?substrate,3C-SiC thick films were prepared on Si?110?by laser chemical vapor deposition using Hexamethyldisilane?HMDS,Si?CH₃?₃-Si?CH₃?₃?as the single precursor,and Ar and H₂ as diluted gases respectively in this current study.The effects of the kind of diluted gas,deposition temperature(T_dep),total pressure(P_tot),deposition time and flow rate of diluted gas on the orientation,morphology and deposition rate(R_dep)were investigated,and 3C-SiC film was grown epitaxially on Si?110?substrate by eliminating interface voids.In Ar atmosphere,the effects of T_dep,time,and f_Ar on orientation of 3C-SiC films,morphology,the crystallization properties and deposition rate(R_dep)were discussed by X-ray diffraction?XRD?,Field Emission Scanning Electron Microscope?FESEM?,Raman spectrum characterization.The results show that only<111>-oriented 3C-SiC was acquired by adjusting process parameters,the 3C-SiC grain of<111>orientation was pyramid-like at T_dep=1598 K,P_tot=100 Pa and f_Ar=500 sccm,and highest R_depep was 41?m/h.The Si substrate was etched with voids by adding Ar and laser heating to deposition temperature first and then adding HMDS.the generating mechanism of interface voids was studied and improve the growth process,the interface voids was eliminated by laser heating to deposition temperature first and then adding HMDS and Ar at the same time,and 3C-SiC<111>films was epitaxially grown on Si?110?substrate at T_pre=1073 K,T_dep=1598 K,P_tot=100 Pa and f_Ar=500 sccm in Ar atmosphere,and the epitaxial growth relationship has been determined by pole figure and Transmission Electron Microscope?TEM?analysis.The in-plane relationship was 3C-SiC[-1-12]//Si[001]and 3C-SiC[-110]//Si[-110].In H₂ atmosphere,the<111>-and<110>-oriented 3C-SiC epitaxial films were acquired on Si?110?substrate respectively.The effects of T_dep?1473 K-1623 K?and P_tot?800 Pa-1400 Pa?on orientation of 3C-SiC epitaxial films were investigated.The results show that 3C-SiC<110>grew epitaxially on Si?110?at low T_dep and low P_totot with in-plane relationship of 3C-SiC[111]//Si[111]and 3C-SiC[110]//Si[110],and the orientation of 3C-SiC films was random with the increasing of T_dep and P_tot,and 3C-SiC<111>grew epitaxially on Si?110?at high T_dep?1623 K?and high P_tot?1200 Pa-1400 Pa?,and 3C-SiC grew fibrous with<111>orientation at low T_dep?1473 K?and high P_tot?1200 Pa-1400 Pa?.