Research On Device Of Graphene And Hybrid Materials Photodetector

Graphene,which was first isolated from graphite through micro-mechanical cleavage in 2004 by Andre Geim and Konstantin Novoselov from the University of Manchester was rapidly occupying a place in the field of semiconductor electronic devices and has developed at an astonishing speed with its excellent physical properties and chemical properties.The combination of high carrier mobility and wide spectral absorption makes it a promising candidate for optoelectronic detection applications.However,the problems of low film quality and difficulty in compounding with other materials are still exist.First,this thesis studied the preparation process of graphene photodetectors.High-quality graphene film was obtained on silicon substrate by wet transfer,and then the photoelectric detector was fabricated and the opto-electric properties of devices were tested and analyzed.Second,the chemical bath deposition(CBD)was used to control the growth of highquality single-layer CdS film on graphene.Photodetector composed of CdS and graphene was fabricated and its working principle was analyzed.The high responsivity and fast response were tested.Moreover,the rGOQDs was first spin coated on graphene and then Al2O3 film as capping layer to isolate the oxygen molecules in the air.Finally,the characterization of the device was performed under the light of deep ultraviolet 254 nm wavelength.This thesis provides a process reference for the subsequent study of the hybrid devices of cadmium sulfide and graphene,and also lays an experimental foundation for the research of photodetectors for composite structures of graphene and other materials.