Preparation And Characterization Of High-quality YIG Films Based On Magnetron Sputtering And Two-segment Annealing

Since the performance of the yttrium iron garnet(Y3Fe5O12,YIG)film directly affects the performance of the device,the film annealing process on the film magnetic properties have a great impact.Therefore,what kind of annealing process can be used to prepare the YIG thin film with excellent performance and meet the requirements of the thin film device is currently worth studying.This study focused on YIG films prepared by RF magnetron sputtering.The influences of two-segment annealing process on crystallinity,microstructure and magnetic properties of YIG films have been investigated.Firstly,different thicknesses of YIG thin films were deposited on Si substrate by RF Magnetron Sputtering.Then,the influences of two-segment annealing conditions on properties of YIG films have been investigated.The YIG film with thickness of 203 nm which is prepared by the two-segment annealing process with the first-segment annealing temperature of T1=750oC and holding time of t1=3h,the second-segment annealing temperature of T2=500oC and holding time of t2=3h,exhibited a crack-free microstructure and presented excellent comprehensive performances with a saturation magnetization of 127emu/cm3,coercive field of 37 Oe and FMR linewidth of 67 Oe.Secondly,different thicknesses of YIG thin films were deposited on GGG substrate by the RF Magnetron Sputtering.Then,the influences of two-segment annealing conditions on properties of YIG films have been investigated.The YIG film with thickness of 3.5?m which is prepared by the two-segment annealing process with the first-segment annealing temperature of T1=750oC and holding time of t1=3h,the second-segment annealing temperature of T2=400oC and holding time of t2=3h,exhibited a crack-free microstructure and presented excellent comprehensive performances with a saturation magnetization of 156emu/cm3.Eventually,the sub-micron YIG films were prepared on GGG substrate by layered deposition method.The effects of different annealing conditions on the properties of YIG thin films were investigated in 150 nm + 150 nm mode and 200 nm + 200 nm mode respectively.Finally,the YIG film with thickness of 300 nm prepared by the two-segment annealing process with the first-segment annealing temperature of T1=750oC and holding time of t1=3h,the second-segment annealing temperature of T2=500oC and holding time of t2=3h,exhibited a crack-free microstructure and presented excellent comprehensive performances with a saturation magnetization of 135emu/cm3.