Study On The Photoconductivity And Piezoresistive Performance Of Pure ZnTe One-dimensional Nanomaterials

Visible light photodetectors have become the research focus in the field of photodetection due to their simple device structure and low power consumption.As an important representative of II-VI compound semiconductors,ZnTe has been widely used in pure green light-emitting diodes,solar cells,and terahertz electromagnetic wave radiation and detection equipment.However,the photoconductivity of ZnTe has not been improved due to the limitations of nanoscale material preparation technology and the unclear microscopic mechanism of photoconductivity.This experiment aims to explore a new synthesis method and the controllable factors based on ZnTe nanowire visible photodetectors.The microscopic mechanism was revealed by the systematic experimental analysis,The main conclusions and innovations are as follows:(1)In this paper,ZnTe nanowires were prepared by the combination of hydrothermal method and chemical vapor reaction method.The prepared product was fabricated into a photodetector device.Photoconductivity testing showed that the ZnTe nanowires can exhibit a strong visible photoelectric response.(2)Build stress sensors.The piezoresistive performance test under static and dynamic stress shows that ZnTe nanowires have obvious piezoresistive effect.The electrical conductivity of the device increases under compressive strain,while the electrical conductivity decreases under tensile strain.(3)The visible photoconductivity under stress shows that the photoconductivity of ZnTe nanowires changes significantly under stress,and the visible photoconductivity of the device can be improved under compressive stress.