| Molybdenum disulfide(MoS2)as a layered transition metal chalcogenide with unique electrical and optical properties has received extensive attention in recent years.Because of its special atomic structure and physical properties,overcomes the drawback of graphene zero band gap in the at the same time,has kept its advantages,making molybdenum disulphide has the potential to be the emerging semiconductor materials.However,the preparation methods of MoS2 is still a challenge for research and industrialization development and a single material has been unable to meet the needs of human,more and more heterogeneous structures,such as MoS2/graphene,MoS2/WS2 has developed,and also have the huge market potential in the future.Based on the above,in order to achieve large area,high quality growth and physical properties research of MoS2 and heterostructure with MoS2,the main results are summarized as follows:(1)High quality MoS2 films and CdSe/MoS2 heterostructures clean surface and thickness of CdSe/MoS2 heterostructures in the range of 20-60 nm were grown on Sio2 substrates utilizing CVD route.XRD and TEM measurements of MoS2 films and CdSe/MoS2 heterostructures demonstrated that the as-grown materials had high crystal quality and CdSe were mainly in wurtzite structure.Room-temperature PL and Raman spectra further confirmed the high quality of MoS2 films and CdSe/MoS2 heterostructures and explain the growth of heterostructure.(2)Utilize high precision EBL technology,we fabricated single CdSe/MoS2 heterostructures field-effect transistors(FETs)with the back-gated configuration which shows a typical n-type semiconducting behavior and electronic mobility found to be 0.0025 cm2/V s.In situ photodetective characterizations of MoS2 films and CdSe/MoS2 heterostructures were carried out under illumination at different wavelengths and power.The devices exhibits outstanding light sensing performances:a responsivity of 1.63 A/W,?r = 370 ?s,and id = 350 ?s,which can rival or even surpass the previous results. |
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