| New nano-optoelectronic devices have become one of the research hotspots in the field of material science and micro-electronic devices.At present,improving the photoelectric response characteristics of photodetector such as the responsivity,detectivity and response time is an important problem in current scientific research.Currently,compared with photodetectors with specific wavelength,broadband and multi-color photodetectors can achieve practical applications of integrated multifunctionality due to their broad spectrum of response range.Based on the above considerations,we utilized the gold nanorod array to improve the photoelectric response characteristics of semiconductor PbS thin film detectors with broadband response.The specific researches of our work are as following:(1)PbS films were prepared by chemical bath deposition,and PbS films with adjustable absorption peaks were prepared in the visible to near-infrared range by adjusting deposition parameters such as complexing agent,deposition temperature and so on.(2)An ultra-thin porous double-pass titanium dioxide film was prepared by a four-steps anodization.In order to construct a PbS thin-film photodetector modified with ordered Au nanoarrays,a porous mask combined with electron beam evaporation technology was used.The responsivity before and after modification was significantly improved and the resonance enhancement effect exhibited a significant wavelength-selectivity.When the height of the modified Au nanorod array increases from 30 to 120 nm,its strongest enhancement peak would have a red shift from 450 nm to nearly 1000 nm of near-infrared. |