Lasing Of CsPbI₃ Triangular Pyramid Optical Micro-cavity

As an important part of film display,integrated optics and optical communication technology in the future,nano-laser has a wide application prospect and is a hot research topic in the field of micro-nano optics.Perovskite semiconductor materials with excellent diffusion length,optical absorption and carrier activity are ideal materials for the fabrication of low lasing threshold nanolaser with wavelength tunability operating at room temperature.In this paper,we systematically study the temperature dependent lasing behavior of CsPbI₃ triangular pyramid prepared by chemical vapor deposition method,and obtain the following specific results.Firstly,by controlling pressure,carrier gas flow rate,and temperature zone distribution of the chemical vapor deposition method,the experimental conditions for the synthesis of CsPbI₃ triangular pyramid are found,and regular CsPbI₃ triangular pyramid samples with smooth plane and clear edges are prepared.Secondly,by comparing the photoluminescence spectra of a single CsPbI₃triangular pyramid with the pump light intensity at different temperatures,the correlation between the presence of lasing and the exciton binding energy is found,and the exciton source of the lasing of CsPbI₃ triangular pyramid is determined.Finally,it is found that the lasing threshold of CsPbI₃ triangular pyramid has a dependence of e index,and its characteristic temperature is 72.73 k,which reveals the relationship between the lasing threshold of CsPbI₃ triangular pyramid and temperature.In conclusion,we combine the chemical vapor deposition synthesis method with the variable temperature spectrum measurement system to systematically study the lasing behavior of the CsPbI₃ triangular pyramid at low temperature.These results provide a new perspective for us to design and optimize optoelectronic devices based on perovskite materials and to study the interaction of light-matter in semiconductor microcavities.