Study On 905nm Tunneling Regenerated Pulsed Laser

High-power semiconductor lasers have the advantages of small size,high efficiency,easy modulation,and long service life,and are widely used in communications,processing,cosmetic medicine and other fields.This paper focuses on the 905 nm three-active area semiconductor laser.In order to achieve higher peak output power and better beam quality in a smaller light-emitting area.The main parameters such as gain spectrum lasing wavelength,distance between adjacent active regions,carrier absorption loss,active region structure and concentration doping are optimized by PICS3 D and Matlab software.A three-active high-power pulsed semiconductor laser with GRIN-SCH-ALOC structure was designed.The device with a cavity length of 1 mm and a strip width of 100 ?m achieves a peak pulse power output of 135.1 W with a pulse current of 41.2 A at a pulse width of 150 ns and a repetition frequency of 6.67 kHz.The half-height width far-field divergence angle in the horizontal and vertical directions is 5.0°×31.1°,and the slope efficiency is 3.15W/A,which is about three times that of the conventional laser.The results show that the peak power and electrical-optical power conversion efficiency of the laser can be significantly improved when the distance between the active regions is 1.55?m,which effectively improves the beam quality of the laser.The temperature rise of the three active-area devices is 29-33?.The analysis shows that the more the number of active regions,the more difficult it is to dissipate heat,which is easy to cause catastrophic optical damage(COD),which limits the service life of the device.