The Effect Of Bond Disorder On Transport Properties Of Silicene

In the field of condensed matter physics,silicene is one of the most popular nanomaterials in recent years.The structure and electrical properties of silicene are similar to those of graphene,but silicene has a large spin-orbit coupling,which makes it more valuable for research.In this paper,by using non-equilibrium Green's function method,tight-binding approximation theory and the method of calculating transmission coefficient by sub-channel,the properties of the silicene nanoribbon with bond disorder are calculated and analyzed theoretically.We implement the bond disorder effect by adding a random disorder potential at the silicon bond.The results show that: The incorporation of bond disorder into silicene increases the charge localization and decreases the total transfer conductance;For the same silicene sample,the bond disorder can make the transmission coefficient of the system decay to zero faster than Anderson disorder;It has little effect on the transport properties of the edge state;When the mixed disorder is bond disorder,the total conductance decreases with the increase of the coupling strength of the Rashba spin orbit,the increase of the electric field strength or the increase of the intrinsic spin orbit coupling parameters;Though the bond disorder effect on the conductance of K valley and K ? valley,it has little influence on perfect valley polarized region,which can be used to make valley valve;When Fermi energy is in the body band gap,the bond disorder has little influence on the conductance between inter-and intravalleys,and the polarization rate of the inter-and intra-valleys is still 100%.However,when Fermi energy increases and enters the bulk of the system,the bond disorder has a great influence on the inter-valley conductance,and the polarization rate of inter-and intra-valleys also appears obvious oscillation.