| The vertical-cavity surface-emitting laser(VCSEL)exhibits several advantages over edge-emitting laser(EEL),including low threshold current,high-speed direct modulation,etc.However,the polarization effectin AlxGa1-xN electron barrier layer(EBL)increases the electrons accumulating at the interface between the last quantum barrier(LQB)and EBLand reduces the effective potential height for electrons and,thereby aggravating the leakage of electrons and reducing the optical output power.This paper proposes two design schemes of EBL to successfully suppress the leakage of electrons.The first scheme uses p-type composition graded AlxGa1-xN to replace the LQB and EBL in the traditional GaN-based VCSEL structure,which increases the optical output power by 8.3%.The second scheme uses a p-type composition graded AlxGa1-xN to replace the LQB in the traditional VCSEL structure,which increases the optical output power by 70.6%. |
