Track Evolutionary Rules Of Femtosecond Pulsed Laser Irradiation On Typical Electronic Devices

The use of femtosecond pulsed lasers to simulate the irradiation effects of high-energy particles in space is playing an increasingly important role in the study of the damage effects of high-energy particles on spacecraft.When the spacecraft is in orbit,the high-energy particles in space first act on the packaging of electronic devices,and then It affects the core area of electronic devices,causing them to be abnormal or even completely invalid.Therefore,the evolution characteristics of heat,force,charge and ablation track generated by laser irradiation of electronic device packages are studied to clarify the nature of the radiation effects of high-energy particles on spacecraft electronic devices.In this paper,a typical electronic device passivation layer side package and boron-doped single crystal silicon are used as research objects.By constructing a temperature field acquisition system,a photovoltage measurement,target surface strain measurement system,and induced charge acquisition system,the research on the evolution characteristics of heat,force,induced charge and ablation track of electronic device passivation layer side package and single crystal silicon under different laser irradiation conditions are carried out.The main research results obtained are as follows:(1)The temperature evolution characteristics of typical electronic device passivation layer side packages and the cross section of single crystal silicon under different laser irradiation conditions were measured,and the law of thermal evolution is obtained.Experimental results show that due to laser ablation damage to the package structure,energy conversion occurs,and the laser irradiation on packages generates an oscillating temperature rise,and the change of the surface temperature is related to the evolution characteristics of the ablation track.(2)The intensity of the laser light pressure and the stress evolution process of the electronic device passivation layer side package and the surface of the single crystal silicon under the action of the laser are obtained;the stress generated by the laser action package is obtained by analyzing the force effect evolution process of the laser action package,which is periodic,and as the effect of pulsed laser continues,the internal stress of the package will continue to accumulate.(3)The relationship between the laser irradiation conditions and the amount of charge produced by the target plate is measured.The charge produced in the package can be induced by femtosecond pulse laser irradiation on forcus and far away from the focus.At the same laser frequency,the charge produced by the focus irradiation is much larger than that produced by irradiation away from the forcus.The higher the frequency of laser irradiation and the energy density of the target,the greater the amount of charge.(4)Scanning electron microscopy(SEM)was used to analyze the ablation morphology characteristics of passivation layer side package and single crystal silicon target under different laser irradiation conditions,and the results were compared with the corresponding temperature field of the target section.The results showed that the thermal effect of packaging materials increased with the increase of laser irradiation frequency.Based on the analysis of the evolution process and results of the heat,force,induced charge and ablation track of the packaging materials under different laser irradiation conditions,the physical mechanism of the charge and ablation track produced by the packaging of electronic devices under the thermal coupling induced by laser irradiation is clarified,which lays the foundation for further revealing the physical nature of the irradiation effect of space high energy particles on the electronic devices of spacecraft.