Response And Protection For Receiver Front-end Link Under Electromagnetic Pluse

With the advancement of modern electronic science and technology,the electromagnetic environment faced by electronic systems is becoming more and more complex.The development of strong electromagnetic pulses is also becoming more and more rapid.Due to its fast rise in time domain,wide coverage in the frequency domain,and high energy,it has been applied to many fields and it poses a certain threat to electronic devices at the same time.Therefore,this paper conducts a series of analysis and research on the response of the RF front-end link of the receiver under electromagnetic pulse.The low noise amplifier circuit model in ADS software is modified based on the damage mechanism of semiconductor devices.A corresponding segmentation simulation damage model is established.And the paper gives some protection suggestions according to its damage mode.For the above research content,the specific work of the thesis is as follows: Firstly,based on the effects of a complex electromagnetic environment on the receiver,the threat and impact on the receiver are analyzed from the aspects of time domain,frequency domain and energy domain.Analyze several types of receivers and summarize the block diagram of a typical RF receiver.Based on the structure of the GPS receiver,the ADS software was used to design and model the RF front-end link,cascading modules and performing time-frequency domain response analysis.The response of the RF front-end link injected by the power source is obtained.This paper is mainly about the low noise amplifier in the receiver RF front-end link.Based on a strong electromagnetic pulse failure mode of a semiconductor device included in the low noise amplifier.The pHEMT(high electron mobility transistor)with a wide range of applications were selected for the study of the working principle and damage mechanism.Based on the nonlinear effects or degradation of the low-noise amplifier under high-power microwave injection and combining with the damage mechanism of pHEMT,by analyzing the characteristics of the response waveform of the transistor under different power source injection,the damage model of the gate-source inductance resistance parallel circuit and the damage model of the gate-drain inductance resistance parallel circuit are established.Finally,the segmentation simulation damage model of the ATF54143 low noise amplifier and the corresponding damage power threshold are obtained.The extensive applicability and representativeness of the high electron mobility transistor used in the RF circuit are analyzed.At the same time,the effects of high-power microwave on RF filter at different frequencies are studied.Finally,the obtained segmented simulation damage model is substituted into the RF link to simulate the response of the RF link under high-power microwave.According to the damage threshold of the most sensitive low-noise amplifier module of the RF link.,suggesting protection for the receiver,and providing reference for the establishment of the subsequent receiver protection scheme.