Study On Preparation Technology Of Laterally Coupled Dfb-ld

In recent years,laterally coupled distributed feedback semiconductor lasers(LC-DFB)have shown unique advantages in the research of single longitudinal mode semiconductor lasers,and have been widely concerned by researchers at home and abroad.By introducing the side periodic perturbed grating structure modulation mode into the laser surface,the purpose of narrowing linewidth,wavelength locking and mode adjustment can be achieved.Because the preparation of the device only needs one-time epitaxial growth,the influence of the defects on the performance of the device due to the secondary epitaxy of the DFB-LD is greatly reduced,Which is of great significance for the development of the requirement of small and high-efficiency low-cost wavelength-locking semiconductor lasers in the fields of pump and other application fields.In this paper,the coupled wave theory and transmission matrix method are used to analyze the DFB-LD theoretically,and the structural characteristics of LC-DFB are analyzed in detail.On this basis,the material composition and grating period of barrier layer in quantum well and active region are determined.Duty cycle and other structural parameters.In this paper,the fabrication technology of the device is studied.Firstly,according to the structural characteristics of the device,the fabrication process of LC-DFB is optimized.By using holographic lithography combined with double alignment process and ICP dry etch technology,the grating and ridge pattern are prepared at the same time,and the layout design and fabrication are completed.The holographic lithography technology,UV exposure and ICP dry etch technology were studied.The process parameters such as exposure development time,corrosion liquid ratio and etched gas ratio were optimized,and then thinned and polished by sputter electrode.Packaging test completed the preparation of LC-DFB.The central wavelength of LC-DFB is 805 nm,the threshold current is 0.4A,the maximum output power is 1.07 W under pulse condition(5?s,100Hz),and the temperature drift coefficient is about 0.07nm/? at 25-80?.