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Simulation Analysis Of InN DFB Semiconductor Laser Based On Reconstruction Equivalent Chirp Technique

Posted on:2020-06-05Degree:MasterType:Thesis
Country:ChinaCandidate:G B ZhongFull Text:PDF
GTID:2370330590995643Subject:Optical engineering
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As a member of the third-generation semiconductor materials,InN has outstanding advantages in electro-optical properties,and has great advantages in the fabrication of optoelectronic devices.Semiconductor lasers,after decades of development,are now moving toward low power,low cost,high precision,and high power.In this thesis,the REC technique is applied to the InN-DFB laser.Firstly,the coupled equivalent mode technique is introduced by presenting the coupled mode theory and the transfer matrix method,and they are theoretically derived.Then,this thesis designed the structural model of the InN-based laser and performed the pattern analysis.Based on this,the grating was reconstructed and the equivalent ?/ 4 phase-shift grating was designed.Then the laser was simulated and compared with the experimental results reported in the actual literature.The feasibility of applying the REC technique to the InN-DFB laser was successfully demonstrated.With this result,the laser was optimized and it is found that the laser cavity length is large to reduce the laser's output power and make the hole burning effect more intense.If the active layer thickness is too big or too small,the laser's output power will be reduced.In addition,three schemes are proposed on the grating structure.The first proposal is equivalent ?/8 phase-shift structure.The results of the simulation show that although the performance of the laser is not improved,the effect of the hole burning effect can be reduced to some extent.The latter two symmetric(asymmttric phase shift structure and double exposure technology)can improve the performance of the laser,but the problem caused by the hole burning effect is more serious.Finally,in order to reduce the effect of the hole burning effect,three kinds of grating schemes,including equivalent three-phase shift structure,equivalent periodic modulation structure and a new type of grating structure,are proposed.The simulation results show that all three can effectively reduce the effect of burning hole effect.And the equivalent three-phase shift and the new structure are combined with each other to find that the effect is better.This provides a theoretical reference for the practical application of the REC technique on InN-DFB lasers.
Keywords/Search Tags:semiconductor laser, InN, Reconstruction-equivalent-chirp, TMM, distributed feedback laser
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