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Binding Energy And Pressure Effect Of Donor And Acceptor Impurity States Of AlxGa1-xN/GaN Quantum Dot-Quantum Well Structure

Posted on:2020-10-27Degree:MasterType:Thesis
Country:ChinaCandidate:L P LeiFull Text:PDF
GTID:2370330578956453Subject:Biophysics
Abstract/Summary:PDF Full Text Request
Under the effective mass approximation,the hydrostatic pressure was studied by variational theory AlxGa1-xN/GaN quantum dots-quantum well structure in the binding energy of the state of the donor and acceptor impurity state theoretical derivation of the binding energy expression,numerical calculation of the structure of state impurity binding energy with nuclear size,the size of the shell,Al components as well as the change of the hydrostatic pressure,and the binding energy of the donor impurity and acceptor impurity are analyzed in comparison.The results show that the binding energy of the acceptor impurity and the donor impurity in the ground state is similar to the change trend of system size,Al component and pressure,but the binding energy of the acceptor impurity is larger than that of the donor impurity in the ground state.The effect of nuclear size on the binding energy of host and donor impurities is much larger than that of shell size.After considering the strain effect,the above problems are further studied theoretically,and the binding energies of donor impurities and acceptor impurities are analyzed and compared.The results show that the binding energy of donor impurity and acceptor impurity decreases with the increase of nuclear size and decreases first and then increases with the increase of shell size.The binding energy of the acceptor impurity and the donor impurity in the ground state varies with the size of the system,but the binding energy of the acceptor impurity is smaller than that of the donor impurity in the ground state.Finally,we analyzed and compared the changes of binding energy with and without strain,and found that with the increasing of nuclear radius,the binding energy after strain was significantly higher than that without strain.And the strain effect becomes weaker and weaker,so the difference between binding energy with and without strain becomes less and less obvious.With the increase of shell size,the binding energy is larger than that without strain.With the increasing of the nuclear radius,the strain effect becomes stronger and stronger,so the difference between binding energy with and without strain becomes more and more obvious.
Keywords/Search Tags:Nitride semiconductor, Quantum dot-quantum well, Donor impurities, Acceptor impurity, The binding energy, Pressure effect, Strain
PDF Full Text Request
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