Research On Preparation And Photoelectronic Character Of Sulfide Semiconductor Thin Films By Solution Method

Sulfide is a kind of inorganic semiconductor material.It not only has excellent nonlinear optical properties and luminescence properties,but nano metal sulfide has significant quantum size effect.In the photoelectric field the majority of sulfide has an ideal band gap of solar cell active layer and a very high absorption coefficient.However,presently,the method of the sulfide film's preparation is more complicated,which makes the whole device fabrication process becomes cumbersome and inefficient.While in the process of solution spin coating films can be a very good solution to solve this problem.Therefore,the main task is to study the solution preparation method of tin sulfide and antimony sulfide semiconductor thin films,and also research its photoelectrical properties.After the study,we obtained two kinds of solution method of excellent preparation for tin sulfide thin films.One is about the use of DMF as solvent,while adding PEG,amyl alcohol and two ethanol as the dispersant,and stannous chloride and ammonium sulfide were used as the source materials.Another one is about the use of ethanolamine as solvent,and the source material is the same with the first metod.Importantly,in this situation,we do not need to add the dispersant.And it can also obtain excellent performance.About the application of tin sulfide optoelectronic devices,this paper mainly studies three types structure of device.The first is the most common Ti O2 sensitized optoelectronic devices which use the tin sulfide as active layer,and finally this device achieved the photoelectric conversion efficiency of 0.18%.The second is the organic-inorganic hybrid optoelectronic devices.It can verify our Sn S is a p-type semiconductor.The third is about the tin sulfide doped heterojunction semiconductor optoelectronic devices.We can get great curves when doped the aluminum in tin sulfide film,and we can also know the conductivity is better when doped with copper and lithium.The same solution was obtained for the preparation of antimony sulfide thin films after the study about tin sulfide.In this method,we use DMF and ethanol amine with 4:1 mixture as solvent,and used antimony chloride and ammonium sulfide as the source materials.About the application of antimony optoelectronic devices,this paper mainly studies two types structure of device.The first is the most common Ti O2 sensitized photoelectric device which use the antimony as active layer,and finally this device achieved the photoelectric conversion efficiency of 0.66%.Another type is the antimony organic-inorganic hybrid optoelectronic devices which use the antimony as electron transport layer.Compared to the type which only use titanium dioxide as electron transport layer devices,we found that the photoelectric conversion efficiency can increased by about 30%,achieved 0.97% efficiency value when introduced into Sb2S3.