Modeling And Analysis Of Pulse Output Characteristics Of Strong Pumped Semiconductor Lasers

Semiconductor pulse lasers have very broad application prospects in many fields.In-depth study of their physical mechanism and design of semiconductor lasers capable of generating ultrashort pulses are of great significance for further promoting their application.The strong pumping(electrical or optical)conditions are conducive to the generation of high-power ultrashort pulses.This dissertation constructed a semiconductor pulse laser model under strong pumping conditions based on the rate equation by including gain saturation and carrier recombination mechanism.After that,this dissertation analyzed the characteristics of the optical pulse generated by the gain switching technique of a semiconductor laser under strong pumping conditions.Based on this model,the characteristics of the optical pulse under non-uniform carrier distribution were studied by constructing the dual-well semiconductor laser rate equation including the carrier transport process which is one of the characteristics of the Transmission-Line Laser Model(TLLM).The main work and research content are as follows:1)The gain saturation and carrier recombination ABC model under strong pumping conditions were introduced into the semiconductor laser rate equation model.The influence of different input pulse parameters,laser gain parameters,and various parameters in the ABC model on the pulse characteristics generated under strong pump conditions were analyzed.2)Experiments were carried out to obtain the pulse output characteristics of dual-well GaN laser under strong current injection conditions.Combined with the characteristics of the TLLM,the carrier transport time and tunneling time were introduced into the semiconductor laser rate equation model to establish a dual-well rate equation.This model was used to fit the experimental results.3)Based on the established dual-well rate equation,the effect of non-uniform distribution of carriers between quantum wells on the output characteristics of pulses were discussed in detail.The semiconductor laser rate equation under strong pumping conditions constructed in this paper can provide important theoretical basis and be a reference for the characteristics analysis and design optimization of semiconductor lasers.