Research On PbS Quantum Dot Solar Cells With Magnetron Sputtering ZnO Electron Transport Layer

The PbS quantum dots can realize the energy absorption in the infrared region of sunlight because of its characteristics of large molar extinction coefficient and quantum limited domain effect,which is of great significance to the photovoltaic transformation of solar energy.Since 2005,the photoelectric conversion efficiency of quantum dot cells has been increasing year by year,showing great potential for development and utilization potential,and it's a critical way to explore the way to make a large scale and reflect a better performance level.We construct ZnO electron transport layer film by RF magnetron sputtering method,which can be flexibly regulated by the substrate temperature,sputtering pressure and so on.It is a very effective method to design a new structure electron transport layer with mass production.First,we apply magnetron sputtering ZnO thin films to PbS quantum dot batteries.In the experiment,we found that the change of ZnO sputtering pressure could flexibly regulate the electrical properties of ZnO at lower temperatures?100??.In order to further enhance the charge collection in the battery,we constructed a n⁺n double-layer electron transport layer composed of a high carrier concentration base(8×10¹⁹ cm^-3)and a low carrier concentration surface(3×10¹⁶ cm^-3).It can enhance that width of depletion region in the heterojunction,improve the separation efficiency of photo-electricity charge,and can reduce the interface compound,thus make the battery realize better performance.Subsequently,we explored the application value of magnetron sputtering ZnO film in PbS.In the high pressure?8 Pa?,the high ZnO film has a concentration of 10²⁰cm^-3,which can be used to replace FTO and flexible ITO substrate as a clear,electrically conductive electrode for a quantum point battery,providing a reference to reducing the battery's fabrication costs.Finally,we explore the stability and large-area device performance of PbS quantum dot battery based on magnetron sputtering ZnO,which shows that this method has certain practical value,and also provides a reference for other kinds of solid-state PN junction batteries.