Study On The Hybrid Detection Mechanism Of Waveguide Gate Type And Its Location Sensitive Structure

With the rapid development of detection technology and human’s demand for the efficient transmission of information,laser detection imaging integration technology has been used in the field of communication.But its essence is to realize the composite detection function through the splitting and time-sharing mode,in most systems,there are problems such as low SWaP index(large volume,large mass),low received power,and difficulty in calibration of multioptical axis.In this paper,in order to avoid the above compound detection technology constraints,a kind of micro-channel plate photo-multiplier device with composite wave-guide gate is put forward from the point of view of position and energy complex detection.The device can extract high frequency pulse information and image information,then realize the integration of imaging communication,and gives a blueprint of complete device design.On the basis of this,the feasibility of the complex wave-guide gate is verified by electron beam bombardment shunt experiment in vacuum environment.Above all,this paper pursues research on the design of the micro-channel photo-multiplier device with composite wave-guide gate,the related technology and the key technology of electron beam modulation mechanism.The main contents are as follows:Firstly,based on the theoretical model of micro-channel photo-multiplication,the working principle of the complex wave-guide gate is discussed,and the feasibility of the device is proved according to the theory of thin film scattering.Make a discussion of the design characteristics of the whole structure of the device,and make an analysis of its design method.The characteristics of the complex wave-guide gate are studied by means of optical transfer function analysis,and the correspondence between device design parameters and imaging capability is given.At the same time,the corresponding electronic optical system design is also given.Secondly,the research on the structure of complex wave-guide gate device is carried out,in order to investigate the effect imposed by the preparation conditions of the growth isolation film on the micro-channel hole inner wall activation layer physical change(micro-channel plate gain ability).The design of probe electrode is discussed.Combining single photon imaging and photoelectric pulse frequency response characteristics to the device constrained model,this essay explores the optimization parameters of electronic optics.At the same time,the author explores the prototype device preparation process of the AlN,Cu and other materials and indium infiltration characteristics and vacuum device construction method.Finally,this part makes a research on the modulation characteristics of electron beam in transmission anode films in complex wave-guide gates.The modulation characteristics of the electron beam by the transmission anode film were analyzed by comparing the ratio of the electron transmission film at different voltage.Based on the micro-channel photo-multiplier prototyping device using complex wave-guide gate,the dynamic response range and gain characteristics are studied experimentally,and then this essay makes an analysis of possible positioning error when complex wave-guide gate secondary electron gain saturation phenomenon appears.May the device design means,structure thought and the result of this paper provide some reference and help for the laser imaging communication composite detection.