Preparation And Properties Of Nb 2 O 5 Doped TiO 2 Target

Targets material is a kind of special electronic functional material with high added value.The target is widely used,but the preparation technology of the target is still in a backward state.TiO₂ based ceramics are semiconductor and optical materials,doped Nb thin films prepared by TiO₂ targets?NTO?is a new type of transparent oxide thin films,the NTO films in the visible range high transmittance?>80%?,has the advantages of good conductivity,and stable performance,good etching.TiO₂ is abundant in nature and is environmentally friendly.In this paper,NTO ceramic targets were sintered in 4 ways: atmospheric pressure sintering,Ar gas sintering,SPS sintering,and vacuum sintering.The main contents and conclusions are as follows:?1?In this paper,NTO target was prepared by powder metallurgy method.The process of ball milling,drying,granulation,molding and degumming was studied.The effect of sintering temperature on NTO target was studied systematically.?2?Green molding is prone to cracking,in order to solve this problem,this paper take addition agent and high limit device,adjusting hydraulic machine pressure minimum pressure pressed green without cracking.According to the results of DSC,at 220?and 430?,570? and 680? can effectively remove residual organic insulation forming agent in the green.?3?Exploration of sintering temperature.Through the experiment,it was confirmed that the optimum sintering temperature is 1350? in ordinary pressure;and the optimum sintering temperature is 1300? in Ar;and the optimum sintering temperature is about 1150? in vacuum;and the optimum sintering temperature of SPS is about 1200?.?4?It is shown by XRD that the NTO target obtained by sintering at 1200? is rutile phase under normal pressure sintering.When the sintering temperature is 1450?,the main target for the structure still show that the rutile phase,but the diffraction peak intensity has been greatly weakened,and the emergence of other diffraction peaks,the target has been obtained by the analysis NbO₂ and Ti₂O₃ formation;Ar gas phase sintering production;burning ceramic target node under vacuum,1150?,no impurity phase.1200? above the NTO target Ti₉O₁₇,Ti₃O₅ and Ti₂O₃ formation;the sintering of SPS ceramic target under the diffraction peak intensity of 1200? preparation is relatively low,but there is no second phase,when the temperature reached 1300?,the diffraction peaks of the target XRD are disordered and the second phase is generated.?5?4 different sintering methods were compared ordinary pressure,Ar,SPS and vacuum.The best electrical conductivity of the target is obtained by vacuum sintering,but the target of vacuum sintering is low density,and the second phase is easy to appear.The most advantage is the SPS sintering,the first is the low sintering temperature,sintering time is short,high efficiency,the most important point is that the sintered target density,small grain,uniform particles,good conductivity.