Study On The Response Of Terahertz Signal In Field Effect Transistor

Terahertz radiation generally refers to electromagnetic radiation in the frequency range of 0.1 THz to 10 THz.Wavelength is approximately in the range of 0.03 mm to 3 mm.Electromagnetic radiation in a relatively wide range between millimeter wave and infrared light.Frequency Higher than traditional electronics,but lower than optical and infrared frequencies.Because terahertz waves have a wide range of application prospects,the detection of terahertz waves has become more and more important in recent years,and the detection of terahertz signals using plasma waves has gradually evolved,as opposed to photonic devices,It does not need to work at low temperatures.The best use of plasma wave detection is the high mobility field effect transistor(HEMT),which is more likely to achieve ballistic effects.The main content of this paper is to use HEMT to study the response of THz signals.The main content of this paper is:1.The principle of the high mobility MOSFET is described in detail,and the theoretical model of the high mobility FET and the I-V characteristics of the device are introduced.2.The Dyakonov-Shur model and Romanov model established by using fluid mechanics are introduced to describe the response voltage of THz signals in high mobility field effect transistors.The response response voltage is described similar to that of Shubnikov-Dehas(SDH).The phenomenon of quantum oscillations,spiral sensitivities and other physical properties.3.By deducing the basic differential equations of Dyakonov-Shur model,a solution of the solution and the second solution and the response are solved.A series of physical factors of the response of the terahertz signal in the high mobility field effect transistor are explored.A series of physical images were obtained and their physical properties were analyzed.