The Study Of Microstrip Meander Line Slow-Wave Structure In V-Band

Millimeter wave technology plays an important role in the field of millimeter-wave radar,millimeter wave terminal guidance and electronic countermeasures,especially given that the V-band millimeter wave has a unique atmospheric attenuation characteristic,which has great application value in the field of secure communication,and the core devices of the technology is the millimeter wave power source.We generally classify millimeter-wave power sources into two types: solid-state power source devices and electronic vacuum devices.At present,due to the rapid development of semiconductor technology,the cost of solid-state power sources has rapidly dropped.Large-scale integrated and easy-to-process solid-state power sources have occupied most low-frequency and low-power electronic applications.However,with the increase of working frequency and power requirements,the characteristics of the wide frequency band,high power capacity,and strong anti-interference ability of the electric vacuum device in the high frequency range make it an irreplaceable core device in the field of millimeter wave communications.The most important part of the O-type electronic vacuum device is the slow-wave structure,and its performance will directly affect the working state of the entire device.Microstrip meander line slow-wave structure is a new type of slow-wave structure.Its physical volume is small,the required working voltage is low,and the working frequency bandwidth is wide,it is also suitable for microfabrication technology manufacturing.It has become a new type of slow-wave structure for millimeter-wave traveling wave tube.It becomes a hot pot of slow-wave structural research.This paper proposes three modified U-shaped meander line slow-wave structures:dielectric rod support plus ridge U-shaped microstrip meander line slow-wave structure,multi-ridge U-shaped microstrip meander line slow-wave structure and suspended substrate U-shaped microstrip meander line slow-wave structure.In this paper,the high-frequency characteristics,transmission characteristics and wave-injection interactions of the two structures in the V-band are studied in detail.The main content of this paper is as follows:1.The influence of the relevant parameters of the microstrip structure conduction band on the microstrip meander and slow-wave structure was analyzed,and the inputand output impedance matching design method for this slow-wave structure was proposed and verified.2.The design of the medium rod support plus ridge U-shaped microstrip meander line slow wave structure,after adjusting and optimizing the initial parameters,it can work in the V band.The high-frequency characteristics and transmission characteristics of the structure were studied and analyzed,and the beam-wave interaction simulation of the structure was finally completed.3.A multi-ridge U-shaped microstrip meander line slow-wave structure was designed to compare the high-frequency characteristics of U-shaped and single-ridged U-shapes.The high-frequency characteristics and transmission characteristics of the structure were studied and analyzed,and the beam-wave interaction simulation was completed.4.The suspended substrate U-shaped microstrip meander line was designed.Its high-frequency characteristics and transmission characteristics were analyzed.The wave-particle interaction particle simulation of the structure was completed.