Implementation Of Power Device Gate Control Method Based On Temperature Adaptive Driving

As the key approach to improve the reliability and decrease the power consumption of the power devices,the novel gate control technique has achieved effective control of the power devices by adjusting driving signal intelligently.While the circuit often works in the wide temperature range(-40??125?),it's an important subject in the area of SPIC to fulfill the control of power devices with low switching losses,low switching overshoots and high temperature stability.Based on the in-depth discussion of the conventional gate control technique,a gate drive circuit with temperature adaptive control techique is proposed.A positive temperature coefficient current source is adopt to restrict the varation of collector current transient with the temperature,which improves the temperature stability of the switching overshoots.An adaptive segmentated current control method is used in the gate control circuit to realize the independent controls of collector current transient dic/dt and collector-emitter voltage transient dvcE/dt.Moreover,the threshold voltage detection circuit and collector-emitter voltage slope detection circuit are designed to determine the working state of IGBT,while the logic control circuit is designed to realize the status switching of the output control circuit.Based on the 0.5?m 600V BCD process,this thesis provides the circuit design,layout design,simulation and tapeout.The test results show that:compared to the mainstream gate control technique applicated in SPIC,the proposed gate control technique acquires the current overshoot with the reduction of 58.9%while the power consumption in the turn-on process is 37.5?J and the current overshoot is only 0.39A.The variation ratio of current overshoot decreases from 30.6%to 6.6%with the operating temperature range between-40??125?.