Design And Analyse Of ?200mm Czochralski Mono-crystalline Silicon Hot-zone Of High Growth Rate And Low Power Consupmtion

Czochralski mono-crystalline silicon is an important semiconductor material,which widely used in integrated circuits and manufacture of solar photovoltaic cells.Hot-zone is the core of Czochralski mono-crystalline silicon growth technology,which has a great effect on the quality,yield and cost of mono-crystalline silicon production.Therefore,rational design of hot-zone is an important method of mono-crystalline silicon manufacturing enterprises to enhance their market competitiveness.Based on the CZ-95 type Czochralski mono-crystalline furnace which is developed by our company to improve the crystal growth rate and reduce power consumption,in this paper,a kind of hot-zone is designed in this paper to grow ?200mm mono-crystalline silicon ingot under the introduction of crystal growth theory.The whole design of hot-zone is to determine the components,the sequence of design,the exhaust route and the material of hot-zone.Then the crucible support,the heater and the side insulator are designed based on the measurement of the quartz crucible.The heat shield and the bottom insulator are numerically simulated using professional hot-zone simulation software.The data is obtained which includes the temperature gradient of crystal-melt interface,heating power consumption and hot-zone temperature distribution.The effects of the inner wall of the heat shield and reflecting plate on the crystal growth and power consumption are analyzed respectively.At last,hot-zone is verified during the crystal growth experiment.Simulation and experimental results show that the incline vertical heat shield enhanced the thermal radiation effect of the crystal surface,which the improvement of the crystal growth rate is 12mm/h.At the same time,increasing of crystal thermal stress is controlled under the threshold which the dislocations could generate.Results also indicate that the bottom insulator with the reflecting plate decreased heating power consumption of 13.8kW,thus reduced production cost,and slightly increased the crystal growth rate.The 0200mm Czochralski mono-crystalline silicon ingot is successfully grown during the crystal growth experiment.The average crystal growth rate during the body growth is 60 mm/h,and the average power consumption during the body growth is 46kW.The results attain the target of hot-zone design and meet the requirement of client's actual production.