Properties Of Functional And Memory Circuits With Memristor

As a kind of non-volatile memory element and the fourth basic passive circuit component,memristor has attracted the public's attention widely and become research hotspot in the fields of circuits,materials,biology,and other fields since it was proposed.We make researches on the basic characteristics of memristor and related memristor model,MLC series-parallel circuit,Wien bridge oscillator circuit with memristor and memristor application in neural network.Main contents are as following:Firstly,the parameters of memristor,memcapacitor and meminductor are studied,and two kinds of basic memristor emulator circuits are introduced.Secondly,specifically,the MLC series-parallel circuit is studied,and its basic electrical characteristics such as partial volts and shunt are analyzed.Then,this dissertation mainly studies properties of Wien bridge oscillator circuit with memristor emulator,and its spectrum variation is analysed in detail.Finally,this dissertation studies the basic characteristics,mathematical principle and circuit model based on Hodgkin-Huxley equation,investigating memristive properties of its potassium ion-channels and sodium ion-channels.Normally,the potassium ion-channels and sodium ion-channels have shown many characteristics of memristor,and can be modeled with the corresponding memristors.The H-H model can clearly reflect positive feedbacks stimulated on the cell membrane.This equation is a typical nonlinear equation.In a particular situation,it has multiple states,and the existence of this kind of multi-state and its non-linear characteristic can interpret successfully exciting phenomenon on stimulating cell membrance and the main cause of action potential generation.Then this dissertation make researches on response of the transmembrane port in H-H circuit model to different stimulating signals mainly.The research show that pinched hysteresis loop in v vs.i plane of transmembrane port will be affected by the variety,amplitude,frequency,especially initial value of gate-activation state variable such as n,m,h of the stimulating signals.The achieved results can give some theoretical supports in the field of neural network research.