Research On Driver And Application Circuits Of SiC Power MOSFET

SiC,as a kind of semiconductor material with wide bandgap,has the advantages,such as,high breakdown electric field strengthSiC,as a kind of semiconductor material with wide bandgap,has the advantages,such as,,high electron saturation drift velocity,and high thermal conductivity and etc.Thus SiC power MOSFET have high voltage,fast switching speed and low loss,and widely applied in the high frequency power electronics field.The thesis aims to study the SiC power MOSFET drive and application circuit.The main research content is as follows:Firstly,the structure features of the SiC power MOSFET and its ?-? characteristics are described;the main parameters that affect the static and dynamic characteristics,such as,the gate drive voltage and gate resistance and so on,are analyzed;and the key characteristic of the SiC power MOSFET and Si device are compared;meanwhile,the switching characteristics of the SiC power MOSFET are analyzed by using the emulation.Secondly,based on the design requirements of drive circuit of SiC power MOSFET,the influence of different drive resistance Rg on the switching characteristics of the SiC power MOSFET is studied by the double pulse test method.On this basis,a drive circuit of the SiC power MOSFET is designed,which is based on BM6103FV chip,and the actual measurement of gate pulse UGS waveform is conducted,which proves the design of the SiC power MOSFET drive circuit is effective and feasible.Finally,an application circuit for LED driven is designed by using SiC power MOSFET.The each circuit part function are described,and the circuit performance is tested by simulation and experiment methods.The results show that the output power of the circuit is 65 W,the efficiency is 91%,the output voltage is 19.4V,and the output current is 3.5A,the performance parameters fulfill to the design indexes requirements,and the designed circuit has small size and low power consumption.This research results can provide a reference for the popularization and application of SiC power MOSFET.