Research Of Coupling Behavior And Synaptic Circuit Based On Memristor

With the development of electronic technology and material technology, the ability and method of complex information processing become more and more intelligent. As the latest achievements of nano materials, the memristor that links the flux and charge, and with memory characteristics, coupled with its natural nano size,has attracted great attention and research in academia and industry. At the same time,the memory effect of memristor is similar to the synaptic memory function of human brain, which is expected to completely change the way of working and information processing.The research status of memristor are introduced firstly, and then the mathematical model of memristor is analyzed and simulated. Further, the coupling behavior between memristors is analyzed in detail, discussing the influence of the initial memristance to normal operating range of memristor. Finally, the paper introduces the synaptic circuit of the memristor bridge and the simulation experiment.Firstly, the mathematical model of HP memristor, spintronic memristor and flux-controlled memristor are introduced.In addition, the mathematical model of the coupling flux-controlled memristor is set up based on the flux-memristor, and the coupling behavior of the memristor in series and parallel is discussed. At the same time, the graphical user interface is used to demonstrate the relation curve of the coupling memristor. Then, the influence of initial memristance on the normal operating range of memristor is analysed. At last, the coupling effects between memristors are confirmed by the Pspice simulator.Finally, the updating rule of the memristor bridge synapse weight is described in detail, and the simulation experiments are carried out by using the circuit simulation software. In order to overcome the disadvantages of the memristor bridge synapse circuit, a new type of bridge circuit is designed, which can save the mutual conversion process of current signal and voltage signal.