Study On Crystal Qualities And Optical Properties Of Antimony Compounds By Thrmal Annealing Process

The narrow band gap semiconductor,which is represented by group III-V antimonide GaAsSb,is an type of excellent infrared photoelectric material.However,the non-uniform distribution of components due to the doping of Sb during the growth process of Ga AsSb will lead to the local states and limiting the carries,which will form local luminescence phenomenon.The thermal annealing process can effectively reduce the local luminescence phenomenon by uniforming the distribution of components.Therefore,it is important to study the effect of thermal annealing process on the crystal quality and the local luminescence of antimony alloys.In this paper,the GaAsSb alloy with Sb composition of 9% had grown on the GaAs substrate by molecular beam epitaxy?MBE?,while the local luminescence phenomenon is exsiting.The slow annealing treatment of the GaAs_0.91Sb_0.09 alloy shows that the annealing process causes the increasing of local luminescence phenomenon,which may be caused by the diffusion of As and Sb caused by annealing.The band-edge luminescence ratio of the alloy will increased after annealing,which is advantageous for improving the band-edge luminescence.However,the local luminescence phenomenon is still existing after slow annealing treatment.The alloys were also treated by rapid thermal annealing with different times.The local luminescence phenomenon was well suppressed under the condition of rapid thermal annealing for 10 s.However,with the increasing of rapid thermal annealing time,the local luminescence phenomenon of the alloy had increased.The XRD results show that the crystal quality of GaAs_0.91Sb_0.09 alloy is optimized under 10 s annealing.The comparative analysis of slow annealing and rapid thermal annealing of the alloy samples had been made by XRD and PL spectra.It could be seen from the comparative analysis that slow annealing will make the local luminescence phenomenon of the alloy phenomenon more apparent.The rapid thermal annealing is a good way for controlling the local luminescence phenomenon of GaAs_0.91Sb_0.09 alloy.In this paper,the rapid thermal annealing of GaAsSb alloy had achieved a good inhibition of local luminescence phenomenon,and improvement of the crystal quality of the alloy.Therefore,rapid thermal annealing is superior to slow annealing in terms of suppressing local luminescence phenomenon.