The Magnetoresistance Characteristics Of Silicon-Based P-n Junction

The magnetoresistance(MR)effect of semiconductor not only has the same magnetic sensitivity in low magnetic field comparable to the giant magnetoresistance effect,but also has the linear magnetoresistance effect in high magnetic.Due to those characteristics,it has attracted many researchers' attention.Based on the rich resources,low cost,mature technology and long spin coherent properties of silicon materials and the potential application of the magnetoresistance effect of p-n junction in magnetic sensor,magnetic logic,magnetic storage,the magnetoresistance characteristics of silicon-based on p-n junction becomes a new research subject.This paper will study the magnetoresistance characteristics of silicon-based on p-n junction.The influence of the magnetic field on the space charge region and the influence of the space charge width on the magnetoresistance are discussed in detail in this paper.While the theoretical model calculating the magnetoresistance ratio is optimized.And two methods of adjusting the magnetoresistance are proposed.When forward bias is applied to the planar p-n junction,the shape of space charge region varying with magnetic field and the influence of space charge region varied on the magnetoresistance characteristics are discussed.In the meantime,the theoretical model calculating the magnetoresistance ratio has been optimized appropriately.And the influence of the width of the space charge region on the magnetoresistance is studied by regulating the width of i-region of p-i-n junction.The non-monotonic characteristics of current dependence upon the width of i-region of p-i-n junction is studied systematically using device physics without magnetic field.In order to regulate MR,the structure named MOS p-n junction is formed,which is analogous to MOSFET(metal oxide semiconductor field effect transistor).And the magnetoresistance characteristics of MOS p-n junction is studied.According to the gate dielectric layer tunneling or not,the MR can be regulated by two kinds of mechanism.By changing the carrier concentration that adjusted by gate voltage,the MR can be regulated easily.At the same time,though tunneling effect,the MR can be regulated by changing the magnetic field direction and gate voltage.The results show that MR can be regulated effectively using both two kinds of mechanism,and the MR is sensitive to the polarity of magnetic field.In addition,this paper also discusses the application of MOS p-n junction on logic and the way to realize it.