The Fabrication Of Two-dimensional Atomic Semiconductor And Research On Heterostructure Devices

In recent years,two-dimensional(2D)atomic semiconductor materials have received much attentions,especially graphene.Due to its excellent electrical and optical properties,graphene has attracted numerous scientists focus on its applications in optoelectronic devices.However,the main shortcoming of graphene is zero band gap.In order to solve this problem,many scholars continue to study on other excellent 2D atomic materials.At the same time,they begin to explore effective methods to open graphene's bandgap,for example,silicon doped graphene(SiG).In this thesis,we have investigated three kinds of excellent 2D materials,SiC,SiG and MoS2.And explored their application prospects in the field of photovoltaic devices such as photodetector.The main contributions of this thesis including:(1)Ultrathin 2D SiC by the reaction of silicon and methane at a high temperature has been synthesized.And we discovered a new method for exploring the synthesis of 2D SiC.(2)A new method for synthesizing SiG is proposed by using liquid silicon.Meanwhile,the liquid silicon source and the graphene can be fully contacted and mixed during the reaction process.The reaction for a large area SiG is more adequate.By summarizing the method of increasing the silicon doping content to further open the graphene band via chemical vapor deposition(CVD),we provided a new direction for the follow-up work.(3)A large area thin layer and monolayer MoS2 was prepared by CVD.And we have designed a wide spectrum photodetector based on MoS2/GaN heterostructure with a excellent performance.The responsivity and detection of the photodetector can reach to 10A/W and 3.8 × 1010cm·Hz1/2/W,which indicates that MoS2 still has great development potential in the field of ultraviolet photoelectric detection.