High-Performance Dimensional Semiconductor Materials/Silicon Heterojunction Photodetectors

Graphene and Indium Selenide have excellent photoelectric properties,when they combine with silicon substrate,the photodetector with high responsivity and detectivity can be faricated.Because graphene can be regulated easily when contact with silicon,so this thesis mainly studied this problem,that combine graphene/silicon photodetector with fluorographene and silicon quantum dots,it control Fermi level of graphene,to improve performance of device.The main results of this work are as follows:1.It maked device with several vertical stacking structure of graphene and fluorographene,and studied that fluorographene has influence on graphene/silicon photodetector when put it on top and bottom of graphene.2.The graphene/silicon photodetector combined with boron-doped silicon quantum dots has been faricated,it make use of near-infrared light absorption of B-SiQDs,and expand response spectrum of near-infrared wavelength(1100nm-1800nm)of graphene silicon-based photodetector.Then it first studied the structure of QDs between graphene and silicon,this new type structure is the embryo of organic QDs-LED,also can help to explore the interface states.3.The synthesis of stable flowerlike ?-In2Se3 has been completed,and first combine y-In2Se3 with n-typed silicon to form ?-In2Se3/Si photodetector,this device has high responsivity and detectivity?easy to get and stable performance,so it has big research value on application fields such as photoelectic sensor,optical switch.