Design And Manufacturing Of A 60V Trench MOSFET With Lower Conductive Resistance

Trench MOSFET is developed on the basis of planar MOSFET power semiconductor devices. Compared with planar MOSFET, Trench MOSFET has lower on-resistance, higher conduction current and faster switching speeds. Therefore, it is widely used in electric vehicles brushless motor market. And meanwhile, because of its vertical channel structure, Trench MOSFET is possible to continually improve cell density and reduce the chip size.There are two key parameters for Trench MOSFET: breakdown voltage and on-resistance. The breakdown voltage reflects the blocking capability of the device, while on-resistance reflects the conduction capability of the device. On-resistance and chip size is inversely proportional. Optimizing on-resistance can reduce on-stats power consumption. But on-resistance reduction often accompanied by the breakdown voltage decrease. The purpose of this paper is to introduce a 60 V Trench MOSFET with lower conductive resistance: the goal is to keep the breakdown voltage without decrease while the on-resistance can be reduced 10%, therefore enhance the competitiveness of the MOSFET product.This paper includes three parts, the first part is the theoretical knowledge and background studies; the second part is the design of the device. Lastly, the third part introduces device fabrication and Product final test results, the result shows on-resistance is 5.9mohm, the break-down voltage is 64.9V, basically meet the expected design goal, reaching customer needs.