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Surface Passivation And Spectral Analysis Of GaAs Material And Its Alloy

Posted on:2017-05-19Degree:MasterType:Thesis
Country:ChinaCandidate:Y L WuFull Text:PDF
GTID:2348330503493172Subject:Microelectronics and Solid State Electronics
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GaAs is an important material in III-V group semiconductor materials, we did research on the wet sulfur passivation of GaAs material, aiming at improving its optical properties and the result showed that after 20min-treatment, the luminous intensity increased to 6times. Meantime, we also studied its optical stability, and put forward a method that depositing Al2O3 thin film on passivated-samples to solve the poor stability of wet sulfur passivation.GaAsSb is an important material in GaAs alloys, we did research on the wet sulfur passivation of GaAs0.95Sb0.05 and GaAs0.04Sb0.96 material, aiming at improving their optical properties. After 15min-treatment, the luminous intensity of GaAs0.95Sb0.05 material was improved to 2 times, compared with untreated samples. At the same time, we used?NH4?2S and S2Cl2 solution successively to do exploratory research on GaAs0.04Sb0.96 material, the result showed the effect of S2Cl2 solution is better, after 10s-treatment, the luminous intensity increased by three orders of magnitude.The optical properties of GaAs and its alloy was improved by passivating, it is of great important to their practical applications.
Keywords/Search Tags:GaAs, sulfur passivation, Al2O3 film, GaAs alloy
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