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Anode Interfacial Modification For Highly Efficient Solution-processed OLED

Posted on:2017-10-14Degree:MasterType:Thesis
Country:ChinaCandidate:L HaoFull Text:PDF
GTID:2348330488965109Subject:Optical engineering
Abstract/Summary:PDF Full Text Request
Organic light-emitting devices (OLED) have been researching extensively with the development of Flat panel displays and Soild-state lighting. Since 1987, the Dr. C.W.Tang and Vanslyke had designed the typically OLED owned sandwich panel structure, the relative researches have been sustaining an explosive growth and the tendency of industrialization has come into being. Until now, there are some matters demanding prompt solution about OLED, for instance, the theories about charge carries control and the optimization of performance index. The work is based on the goals of solving the unbalance of charge carries injection and enhancing the efficiency of red/deep red OLED.1.Utilizing the Hummers method to obtain the Graphene oxide (GO), and applying it into the solution-processed blue phosphorescent OLED, replacing the PEDOT:PSS as an hole-inject material to modify the devices. The work could sufficiently shows the superiority of alternative material. The raw materials of GO are so easy to get and no concern for price and there are mature technology to make large-scale production. The more attractive feature is the OLED containing GO have a better stability than the common OLED. So such advantages make GO be a new alternative in commercialization application.2.Utilizing the Sol-gel method to prepare the NiOx precursor solution and manufacture the p type metal semiconductor thin film. By optimizing the structure of devices and choosing the bilayer NiOx/PEDOT:PSS to adjust the balance of charge carries injection and decrease the exciton quenching, we eventually get highly efficient small-molecular blue phosphorescent OLED. Considering the researches about p type metal oxide are much less than the n type metal oxide, our work provides a novel pathway for exploiting the p type metal oxide.3.The application of series red/deep red emitting materials (Ir-CHO?Ir-OH and Ir-PQCz) based on the ppy-CHO ligand in OLED. Utilizing the mixed host material CPB:TCTA that relative theories have been done by our team, we gain excellent device performance. That make the demonstration in attracting electrons of ppy-CHO move forward a single step, and the electron mobility of iridium complexes has been improved a lot. Otherwise, the performance of relevant RGB WOLED is also extremely well qualified, and the best current efficiency reaches 26.3 cd/A.
Keywords/Search Tags:anode modify, gapheme oxide, NiO_x, solution-processed, OLED
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