Theoretical And Experimental Study On The Gain Spectrum And Linewidth Enhancement Factor Of 1.55?m Semiconductor Laser

The gain spectrum and linewidth enhancement factor of the semiconductor laser are the key parameters in assessing internal structure and materials of device. In this paper, we firstly got the gain spectrum of 1.55?m AlGaInAs/InP strain-compensated multiple quantum well(MQW) semiconductor laser of sample A by measuring the amplified spontaneous emission from both facets. At the same time, we simply analyzed the relationship between lasing wavelength and the gain spectrum along with the carrier injection improvement. Compared with the simulation results, it is feasible.And then using high-resolution spectroscopy distinguishs the vertical mode to get the gain spectrum of improved edge F-P cavity 1.55?m emitting laser of sample B by Hakki-Paoli method. The semiconductor get significantly improved after using the above-mentioned opinion, and the lasing wavelength is exactly 1.55?m witch illustrates that the feedback of measurement is accurate and valuable.We get the linewidth enhancement factor of AlGaInAs/InP strain-compensated multiple quantum well semiconductor laser through two methods. At the same time, we make the simple analysis and see that the linewidth enhancement factor is relatively low when current is small. Comparing with the simulation results the experimental test results is feasible and both two methods are valuable. Hakki-Paoli method is better.This is the first time to obtain the linewidth enhancement factor of 1.55?m laser by measuring the amplified spontaneous emission from both facets, which is creative. Secondly, the two methods are combined to analyze the gain characteristics of before and after threshold, which is firstly proposed...