| With the development of social science and technology, the military and civilian detectors have been gradually developed, the ultraviolet detector and infrared detector are two kinds of common photoelectric detector. At present, the required material of the UV-IR dual-color detector is difficult, the preparation process is complex, the production cost is high, and the integrated device response is relatively low. The design of the dual-color detector not only reduces the difficulty of preparation of device, but also increases the performance of the device.This design starts with the theoretical analysis and design,the process of preparing device using simulator system. The bias and frequency dependence of the quantum efficiencies of the detectors were studied and the quantum efficiencies were increased and decreased with the increase of them, respectively; the response characteristics of the UV detectors under low temperature environment were studied and the photo-dark current ratio could be increased and the fall time could be decreased by lowering the temperature. This paper has been prepared high performanceMSM UV detectors by the high Al componentAlGaN. At the same time,chemical vapor deposition growth of graphene, and characterization of graphene. The use of high quality graphene prepared more perfect infrared detector.This paper designs the AlGaN and Graphene basedUV-IRdual-color detector not only reduces the difficulty of integration, but also reduces the process cost in the preparation process of device. In terms of performance, it can detect the ultraviolet band and the infrared band, it can reduce the false alarm frequency. At room temperature, the responsivity of the dual-color detector was 5.9 mA/W at 263 nm and0.67 mA/W at 1.15?m under bias voltages of 10 V and 5V,respectively. Besides, the responsivity of the detectorsincreases with the increase of bias voltage. For dualcolor detector preparation takes its place in the photoelectric field. |
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