The Optimization Of Conventional Pure Red And Blue Organic Light-emitting Devices

Organic light-emitting devices, for short OLED, have been attracted intensive and increasing attention due to their potential advantages of self-luminescence, high efficiency, high resolution, fast response, wide-viewing angle, full color, low cost and simple fabrication process, flexible, thin, et al, which OLED have been also considered as the most competitive technology for next generation of display and lighting. As is well known, organic light-emitting devices require the primary color of stable efficiency and color and low operating voltage in full-color display, also, high brightness and high efficiency under the low-voltage have the very important significance in full-color display. This thesis is mainly to improve and enhance the stability and efficiency of conventional devices of red phosphor, blue fluorescent and lower the operating voltage, the main tasks as follows:1) Based on the requirements of electrolumincence emission peak 632-633 nm and 640-650 nm, we adopt three deep-red guest Ir(MDQ)2(acac)?Ir(piq)3 and Ir(pmiq)2(acac), which the host is the bipolar deep blue material, when we make the thickening of HTL and ETL of the Ir(MDQ)2(acac) devices, resulting in the emission maximum shifting to 632 nm, the device parameters as follows: the highest external quantum efficiency is 15.52 %; when we adopt the deep-red guest Ir(piq)3, the device parameters as follows: the highest external quantum efficiency is 12.55 %; when we adopt the deep-red guest Ir(pmiq)2(acac), the device parameters as follows: CIEx,y(0.70, 0.30), the highest external quantum efficiency is 12.38 %.2) Using the conventional deep-blue material MADN, adopting the new style do uble hole injection layers, when we adopt the device structure ITO/MoO3(5)/HAT-CN(5)/TAPC(60)/MADN(30)/TmPyPB(20)/Li F(1)/Al, the device show the good performan ce,the device parameters as follows: the Von is 2.8 V, CIEx,y(0.14,0.08), the highest e xternal quantum efficiency is 4.15 %; when the MADN devices are doping the high fluorescence efficiency guest BUBD-1, the device show the good performance, the de vice parameters as follows: the device attain the maximum brightness 16130 cd/m2 at7.8 V, the highest external quantum efficiency is 7.87 %, the highest current efficie ncy is 13.8 cd/A, the highest power efficiency is 14.1 lm/W.3) Using the conventional deep-blue material ?,?-ADN, adopting the p-i-n structure optimizing the ?,?-ADN doping the high fluorescence efficiency guest BUBD-1, the device show the good performance: the device attain the maximum brightness 20070 cd/m2 at 7 V, the Von is 2.9 V, the highest external quantum efficiency is 6.85 %, when we change the thickness of the n-doping layer, affecting the device color stability.