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Design, Simulation And Fabrication Of A VCSOA-PIN Photodetector

Posted on:2016-09-07Degree:MasterType:Thesis
Country:ChinaCandidate:K WangFull Text:PDF
GTID:2348330479453332Subject:Optical Engineering
Abstract/Summary:PDF Full Text Request
Photodetectors(PDs) play a key role in the receiver of optical communication systems for their transfering the optical signal into electrical. Nowadays, the most commonly used commercial PDs are avalanche photodiodes(APDs) and PIN photodiodes integrated with preamplifiers. Being limited by their internal gain bandwidth product(GBD), APDs have little practical application in optical communication systems at a bit rates higher than 25Gb/s. Compared with APDs, PINs integrated with preamplifiers have no trade-off between gain and bandwidth, which enables them to have a lager potential of achieving better performance in that high bit rates systems.In recent years, PINs integrated with vertical cavity semiconductor optical amplifier(VCSOA) has attracted much attention. Besides having the advantages inherited from conventional semiconductor optical amplifers(SOAs), such as low cost, low power consumption and good integration, etc, VCSOA also overcomes the shortcomings that high coupling loss with fiber and polarization dependence, etc. So, VCSOA-PIN integrated preamplified photodetectors have wide application prospects, especially in the areas call for serious control of cost.In this thesis, we propose a novel photodetector based on VCSOA monolithic integration with PIN and perform an introduction of its structure, operating principle and numerical analysis method. Then the author simulates its performance and optimizes the design according to the results. Finally we fabricate some device samples for experimental test to vertify our design concept.The main content of this thesis are as follows:(1)An introduction of the structure and working principle of the studied VCSOA-PIN integrated preamplified photodetector.(2)A brief introduction of theory and implement of device numerical solver based on Fabry-Perot(FP) approach and carrier transport model.(3)Simulation of the introduced VCSOA-PIN structure with self-programmed solver, and analysis and conclusion of the results. Then process of fabrication and experimentation are given and our original design concept are verfied.
Keywords/Search Tags:Photodetector, Vetical cavity semiconductor amplifier, Photodiode, Monolithic integration
PDF Full Text Request
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