Micro-magnetic Simulation Of Multi-channel STT-MRAM Memory Cell Structures And Magnetic Domain Wall Motion Driven By Electric Current

In recent years, as people have become increasingly demanding on data storage, the new information storage technologies are emerging. Meanwhile spintronics, since been proposed, due to its significant applications in information storage and processing, are highly valued by academia and industry. Many researchers in the field of spintronics have done a lot of fruitful research work to promote rapid development of the spintronic research and application. The new memory device STT-MRAM and magnetic domain wall motion driven by electric current have great significance as storage technology combines spintronics.In this paper, we presented two new STT-MRAM memory cell structures which are three-path and five-path structures, based on the conventional sandwich structure and our previously-proposed single channel structure. The writing processes of the four structures were investigated using micro-magnetic simulations. We have researched and analyzed the pros and cons of four structures in TMR value, the magnetization reversal efficiency and the critical current density. The results show that single-channel structure has the maximum value of TMR, the highest magnetization reversal efficiency and the minimum critical current density, which is proved to be the best structure. We also calculated and analyzed the impact of the free layer thickness and channel cross-sectional area on the structural performance. Results showed that the structure with a smaller cross-sectional area, a larger channel thickness has better performance.In addition, we also did simulation on magnetic domain wall motion driven by electric current. First, the magnetic domain wall motion driven by electric current unit structure was modeled and calculated by micro-magnetic simulation software. Then we optimized the structure after analyzing the drawbacks of the structure.